Microcircuit series 432
Device type   Main electrical parameters Specifications Housing type, dimensions
as per GOST 17467-88 
432 EP3
432 EP3 OSM
Two current switches per
5А  each

Iin.leak≤10 mA (Uout=100 V, Uin=– 1.5 V)
Uost≤1 В  ( Iout=5 А,  Iin=1А)
KуI= 10¸ 200  (Uout=10 В, Iout=5 А)
ton≤0,1 mcs ;   toff≤0,42mcs


14,5 х 12 х 5 mm

432 EP 4
432 EP 4 OSM
Two current switches per
5А and 1,0 А
For Darlington scheme connection 
Iin.leak≤15 mA  (Uout= 00 V,  Uin=–1. 5 V)
Uost≤2.7 V  (Iout=5 А,  Iin=0.01 А)
KуI≥2000  (Uout=10 В,  Iout=5 А)
ton≤0.3 ms ;   tout≤1.0 ms  


432 EP 5
432 EP 5 OSM
Two current switches per
1.0 А each

Iout.leak≤2 mА (Uout=100 V, Uin=– 1.5 V)
Uost≤1.5 В  (Iout=1 А,  Iin=0.01 А)
KуI≥500  (Uout=10 В, Iout=1 А )
ton≤0.3 ms ;   toff≤1.0ms





Found a typo? Please select it and press Ctrl + Enter.

The main area of activity of the Joint Stock Company (JSC FOTON) is development and production of electronic equipment and integrated circuits for electronic facilities, as well as manufacturing of various electronics products.


  • E-mail info@oaofoton.uz
  • Phone +99871 236-01-16
  • Adress 13, Amir Temur str., Tashkent, Uzbekistan.