MICROCIRCUIT SERIES 432

Microcircuit series 432
Device type   Main electrical parameters Specifications Housing type, dimensions
as per GOST 17467-88 
432 EP3
432 EP3 OSM
Two current switches per
5А  each

Iin.leak≤10 mA (Uout=100 V, Uin=– 1.5 V)
Uost≤1 В  ( Iout=5 А,  Iin=1А)
KуI= 10¸ 200  (Uout=10 В, Iout=5 А)
ton≤0,1 mcs ;   toff≤0,42mcs

 6К0.347.487-01TU

14,5 х 12 х 5 mm

432 EP 4
432 EP 4 OSM
Two current switches per
5А and 1,0 А
For Darlington scheme connection 
Iin.leak≤15 mA  (Uout= 00 V,  Uin=–1. 5 V)
Uost≤2.7 V  (Iout=5 А,  Iin=0.01 А)
KуI≥2000  (Uout=10 В,  Iout=5 А)
ton≤0.3 ms ;   tout≤1.0 ms  
 

6К0.347.487-01TU

432 EP 5
432 EP 5 OSM
Two current switches per
1.0 А each

Iout.leak≤2 mА (Uout=100 V, Uin=– 1.5 V)
Uost≤1.5 В  (Iout=1 А,  Iin=0.01 А)
KуI≥500  (Uout=10 В, Iout=1 А )
ton≤0.3 ms ;   toff≤1.0ms

6К0.347.487-01TU

 

 

 

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The main area of activity of the Joint Stock Company (JSC FOTON) is development and production of electronic equipment and integrated circuits for electronic facilities, as well as manufacturing of various electronics products.

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